Infineon IPB019N08N3 G2: High-Performance 80V OptiMOS 3 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPB019N08N3 G2, an 80V N-channel power MOSFET from the esteemed OptiMOS™ 3 family, stands out as a robust solution engineered to meet these demanding requirements. This device is specifically designed for a wide array of applications, including high-frequency DC-DC conversion, motor control, and power supplies in industrial, telecom, and computing environments.

A key highlight of this MOSFET is its exceptionally low on-state resistance (RDS(on)) of just 1.9 mΩ (max). This ultra-low resistance is crucial for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. By operating cooler, systems can achieve greater power density and require less complex thermal management, leading to more compact and cost-effective designs.

Furthermore, the IPB019N08N3 G2 boasts outstanding switching performance. The OptiMOS™ 3 technology platform is renowned for its low gate charge (Qg) and figure of merit (FOM), enabling faster switching speeds. This is particularly beneficial for high-frequency switch-mode power supplies (SMPS), where it contributes to lower switching losses and allows for the use of smaller passive components like inductors and capacitors.

Housed in a TO-263 (D2PAK) package, this MOSFET offers a popular and industry-standard footprint, facilitating easy PCB layout and assembly. The package is designed for effective power dissipation, supporting high current handling capabilities with a continuous drain current (ID) of 180A at 25°C. This makes it suitable for handling high power levels in a durable surface-mount package.

Robustness is another cornerstone of its design. With an 80V drain-source voltage rating, it provides a sufficient safety margin for 48V bus systems, enhancing reliability in demanding conditions. The device also features a high avalanche ruggedness and is qualified according to the highest quality standards, ensuring long-term operational stability.

ICGOOODFIND: The Infineon IPB019N08N3 G2 is a superior power MOSFET that masterfully combines ultra-low RDS(on), fast switching speed, and high current capability. It is an optimal choice for designers seeking to maximize efficiency and power density in a reliable, industry-standard package.

Keywords: Low RDS(on), High-Frequency Switching, Power Efficiency, TO-263 Package, OptiMOS™ 3 Technology.