Infineon BSZ300N15NS5: High-Performance 15V OptiMOS 5 Power MOSFET

Release date:2025-10-29 Number of clicks:85

Infineon BSZ300N15NS5: High-Performance 15V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon BSZ300N15NS5, a member of the esteemed OptiMOS™ 5 15V family, stands out as a benchmark for high-performance power conversion in a compact package. This N-channel power MOSFET is engineered to deliver exceptional efficiency in a wide range of demanding applications.

A key strength of the BSZ300N15NS5 lies in its extremely low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 0.3 mΩ at 10 V, it minimizes conduction losses. Simultaneously, its optimized gate charge (Q G) ensures swift switching, which drastically reduces switching losses. This superior combination is critical for applications where every percentage point of efficiency counts, directly impacting thermal performance and overall system size.

The device is housed in an SuperSO8 (PG-TDSON-8) package, which offers an excellent power-to-footprint ratio. This makes it an ideal solution for space-constrained designs requiring high current handling capability. Furthermore, the OptiMOS™ 5 technology provides enhanced robustness and reliability, featuring a high maximum drain current (I D) of 300 A and an avalanche-rated design that can withstand strenuous operating conditions.

Typical applications that benefit from the BSZ300N15NS5's prowess include:

Synchronous rectification in switched-mode power supplies (SMPS) and server power units.

Motor drive and control circuits in industrial automation and robotics.

High-current DC-DC conversion stages in telecom and computing infrastructure.

Battery management systems (BMS) and protection circuits.

ICGOOODFIND: The Infineon BSZ300N15NS5 is a top-tier power MOSFET that sets a high standard for efficiency and power density. Its industry-leading low R DS(on) and optimized dynamic performance make it a superior choice for designers aiming to push the limits of power conversion in modern electronic systems.

Keywords: Low R DS(on), OptiMOS™ 5, High Efficiency, Synchronous Rectification, SuperSO8 Package.

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